Semiconductor device and manufacturing method thereof

ABSTRACT

A semiconductor device includes a capacitor. The capacitor includes a first electrode and a second electrode disposed in a first metal layer. The first electrode has a first end and a second end, and the first electrode has a spiral pattern extending outwards from the first end to the second end. The first electrode and the second electrode have a substantially equal spacing therebetween.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to Chinese Application Serial Number202010392643.0, filed May 11, 2020, which is herein incorporated byreference in its entirety.

BACKGROUND

Integrated chips are formed on semiconductor die including millions orbillions of transistor devices. The transistor devices are configured toact as switches and/or to produce power gains so as to enable logicalfunctionality for an integrated chip (e.g., form a processor configuredto perform logic functions). Integrated chips often also include passivedevices, such as capacitors, resistors, inductors, transistors, etc.Passive devices are widely used to control integrated chipcharacteristics (e.g., gain, time constants, etc.) and to provide anintegrated chip with a wide range of different functionalities (e.g.,manufacturing analog and digital circuitry on the same die).

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-4 and 6 are plan views of semiconductor devices according tovarious embodiments of the disclosure.

FIGS. 5 and 7 are cross-sectional views of semiconductor devicesaccording to various embodiments of the disclosure.

FIGS. 8A to 8F are cross-sectional views of the various stages offabricating a semiconductor device according to some embodiments of thedisclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Throughout the description, the term “MOM capacitor” is used to refer toa capacitor that has an insulator between two conductive plates, inwhich the insulator may include dielectric materials such as oxides. Asingle layer MOM capacitor may comprise a first metal plate, a secondmetal plate and an insulation layer deposited between the first metalplate and the second metal plate. The capacitance of the single layerMOM capacitor is proportional to the area of the metal plates and thedielectric constant of the insulation layer.

Reference is made to FIG. 1, which is a plan view of a semiconductordevice according to some embodiments of the disclosure. Thesemiconductor device includes a capacitor 100, which includes a firstelectrode 110 and a second electrode 120, in which the first electrode110 and the second electrode 120 are disposed in a plane, such as in thesame metal layer. Dielectric material (not shown) is filled between thefirst electrode 110 and the second electrode 120. In some embodiments,the capacitor 100 may extend into other layers (e.g., interconnected byconductive vias). The capacitor 100 of FIG. 1 may be repeated in otherlayers above and/or below the given layer shown in FIG. 1. Accordingly,the first electrode 110 and the second electrode 120 may be repeated inmultiple metal layers, and the electrodes in different metal layers areinterconnected.

The capacitor 100 is a double surround structure. The first electrode110 and the second electrode 120 are not directly connected to eachother, and the first electrode 110 and the second electrode 120 surroundeach other from a center C of the capacitor 100 to an outer portion ofthe capacitor 100. For example, the capacitor 100 can be a double spiralstructure, in which the first electrode 110 and the second electrode 120both are spiral patterns.

In some embodiments, the first electrode 110 has a first end 112 and asecond end 114. The first end 112 is substantially located adjacent thecenter C of the capacitor 100, and the first electrode 110 spirallyextends outwards from the first end 112 to the second end 114. The firstelectrode 110 is a continuous line and does not have any branch betweenthe first end 112 and the second end 114. In some embodiments, the firstelectrode 110 includes a plurality of curve portions, and the curveportions are connected to each other. The width of the first electrode110 is uniform from the first end 112 to the second end 114. The firstelectrode 110 may include any suitable conductive material. In someembodiments, the first electrode 110 may include polysilicon. In someother embodiments, the first electrode 110 may include metal.

In some embodiments, the second electrode 120 has a first end 122 and asecond end 124. The first end 122 of the second electrode 120 issubstantially located adjacent the center C of the capacitor 100, andthe second electrode 120 spirally extends outwards from the first end122 to the second end 124. The second electrode 120 is a continuous lineand does not have any branch between the first end 122 and the secondend 124. In some embodiments, the second electrode 120 includes aplurality of curve portions, and the curve portions are connected toeach other. The width of the second electrode 120 is uniform from thefirst end 122 to the second end 124. The second electrode 120 mayinclude any suitable conductive material. In some embodiments, thesecond electrode 120 may include polysilicon. In some other embodiments,the second electrode 120 may include metal.

In some embodiments, the first electrode 110 and the second electrode120 have a substantially equal spacing therebetween. The first electrode110 is substantially equally spaced from the second electrode 120. Thespace can be regarded as the distance between the first electrode 110and the second electrode 120. Alternatively, the space can be regardedas the width of the dielectric material between the first electrode 110and the second electrode 120. The size of the space between the firstelectrode 110 and the second electrode 120 is designed depending on thecapacitor breakdown voltage requirement.

In some embodiments, the double spiral structure including the firstelectrode 110 and the second electrode 120 is a multi-turns structure.That is, the angle from the first end 112 of the first electrode 110 tothe second end 114 of the first electrode 110 is greater than about 720degrees, and the angle from the first end 122 of the second electrode120 to the second end 124 of the second electrode 120 is greater thanabout 720 degrees.

The first electrode 110 and the second electrode 120 extend in the samedirection. For example, the first electrode 110 and the second electrode120 both extend counterclockwise or clockwise from the center C of thecapacitor 100. For better space utilization, the first end 112 of thefirst electrode 110 and the second end 114 of the first electrode 110face the same direction, and the first end 122 of the second electrode120 and the second end 124 of the second electrode 120 face the samedirection. Moreover, the first end 112 of the first electrode 110 andthe first end 122 of the second electrode 120 do not face the samedirection, and the second end 114 of the first electrode 110 and thesecond end 124 of the second electrode 120 do not face the samedirection. In some embodiments, the first end 112 of the first electrode110 and the first end 122 of the second electrode 120 face oppositedirections. In some embodiments, the second end 114 of the firstelectrode 110 and the second end 124 of the second electrode 120 faceopposite directions.

In some embodiments, the spiral pattern of the first electrode 110 andthe second electrode 120 is a spiral of Archimedes. The first electrode110 and the second electrode 120 can be connected to power lines orother metal layers through vias 130. In some embodiments, the vias 130are disposed adjacent the second ends 114, 124 of the first and secondelectrodes 110, 120.

The capacitor 100 as shown in FIG. 1 can increase the effective areawithin the same layout area, thereby resulting in a larger capacitancevalue with the same layout area. The pattern of the double surroundcapacitor is not limited to the spiral pattern, and other suitablepatterns can be utilized in the double surround capacitor. Variations ofthe double surround capacitor are discussed in the followingembodiments.

Reference is made to FIG. 2, which is a plan view of an integratedcircuit having a semiconductor device according to some embodiments ofthe disclosure. In some embodiments, the capacitor 200 of thesemiconductor device is a quadrilateral double surround structure. Thecapacitor 200 includes a first electrode 210 and a second electrode 220.The first electrode 210 and the second electrode 220 are disposed in aplane, such as in the same metal layer. The first electrode 210 and thesecond electrode 220 are not directly connected to each other, and thefirst electrode 210 and the second electrode 220 surround each other andextend from a center C of the capacitor 200 to an outer portion of thecapacitor 200.

The first electrode 210 of the capacitor 200 includes a plurality ofturns. The first electrode 210 extends outwards from a first end 212 toa second end 214, in which the first end 212 of the first electrode 210is disposed adjacent the center C of the capacitor 200. The firstelectrode 210 is a continuous line and does not have any branch betweenthe first end 212 and the second end 214. The first electrode 210includes a plurality of first portions 216 and a plurality of secondportions 218. The first portions 216 and the second portions 218 arecoplanarly arranged. The first portions 216 and the second portions 218are alternately arranged and connected to each other from the first end212 to the second end 214 of the first electrode 210. Each of the firstportions 216 extends longitudinally in a first direction D1 a. The firstportions 216 are substantially parallel to each other. Each of thesecond portions 218 extends from the adjacent first portion 216 in asecond direction D2 a, in which the second direction D2 a is nonco-linear with the first direction D1 a. The second portions 218 aresubstantially parallel to each other.

In some embodiments, the lengths of the first portions 216 are not thesame. In some embodiments, the lengths of the first portions 216 aregradually increased from the center C of the capacitor 200. For example,the first portion 216 adjacent the center C has the first end 212 andhas the shortest length among the first portions 216. Similarly, thelengths of the second portions 218 are not the same. In someembodiments, the lengths of the second portions 218 are graduallyincreased from the center C of the capacitor 200. For example, thesecond portion 218 farthest away from the center C has the second end214 and has the longest length among the second portions 218.

The second electrode 220 of the capacitor 200 includes a plurality ofturns. The second electrode 220 extends outwards from a first end 222 toa second end 224, in which the first end 222 of the second electrode 220is disposed adjacent the center C of the capacitor 200. The secondelectrode 220 is a continuous line and does not have any branch betweenthe first end 222 and the second end 224. The second electrode 220includes a plurality of first portions 226 and a plurality of secondportions 228. The first portions 226 and the second portions 228 arecoplanarly arranged. The first portions 226 and the second portions 228are alternately arranged and connected to each other from the first end222 to the second end 224 of the second electrode 220. Each of the firstportions 226 extends longitudinally in the third direction D3 a. Thefirst portions 226 are substantially parallel to each other. Each of thesecond portions 228 extends from the adjacent first portion 226 in afourth direction D4 a, in which the fourth direction D4 a is nonco-linear with the third direction D3 a. The second portions 228 aresubstantially parallel to each other.

In some embodiments, the first direction D1 a is substantially parallelto the third direction D3 a, and the second direction D2 a issubstantially parallel to the fourth direction D4 a. In someembodiments, an angle θ1 a between the first direction D1 a and thesecond direction D2 a is greater than or approximately equal to 90degrees, and an angle between each of the first portions 216 and each ofthe second portions 218 is greater than or approximately equal to 90degrees. In some embodiments, an angle θ2 a between the third directionD3 a and the fourth direction D4 a is greater than or approximatelyequal to 90 degrees, and an angle between each of the first portions 226and each of the second portions 228 is greater than or approximatelyequal to 90 degrees.

In some embodiments, the first portions 226 of the second electrode 220are substantially parallel to the first portions 216 of the firstelectrode 210, and the second portions 228 of the second electrode 220are substantially parallel to the second portions 218 of the firstelectrode 210.

In some embodiments, the lengths of the first portions 226 are not thesame. In some embodiments, the lengths of the first portions 226 aregradually increased from the center C of the capacitor 200. For example,the first portion 226 adjacent the center C has the first end 222 andhas the shortest length among the first portions 226. Similarly, thelengths of the second portions 228 are not the same. In someembodiments, the lengths of the second portions 228 are graduallyincreased from the center C of the capacitor 200. For example, thesecond portion 228 farthest away from the center C has the second end224 and has the longest length among the second portions 228.

The first electrode 210 and the second electrode 220 can be connected topower lines or other metal layers through vias 230. In some embodiments,the vias 230 are disposed adjacent the second ends 214, 224 of the firstand second electrodes 210, 220.

Reference is made to FIG. 3, which is a plan view of a semiconductordevice according to some embodiments of the disclosure. In someembodiments, the capacitor 300 of the semiconductor device is ahexagonal double surround structure. The capacitor 300 includes a firstelectrode 310 and a second electrode 320. The first electrode 310 andthe second electrode 320 are disposed in a plane, such as in the samemetal layer. The first electrode 310 and the second electrode 320 arenot directly connected to each other, and the first electrode 310 andthe second electrode 320 surround each other and extend from a center Cof the capacitor 300 to an outer portion of the capacitor 300.

The first electrode 310 of the capacitor 300 includes a plurality ofturns. The first electrode 310 extends outwards from a first end 312 toa second end 314, in which the first end 312 of the first electrode 310is disposed adjacent the center C of the capacitor 300. The firstelectrode 310 is a continuous line and does not have any branch betweenthe first end 312 and the second end 314. The first electrode 310includes a plurality of first portions 316, a plurality of secondportions 317, and a plurality of third portions 318. The first portions316, the second portions 317, and the third portions 318 are coplanarlyarranged. The first portions 316, the second portions 317, and the thirdportions 318 are sequentially arranged and are connected to each otherfrom the first end 312 to the second end 314 of the first electrode 310.

Each of the first portions 316 extends longitudinally in a firstdirection D1 b. The first portions 316 are substantially parallel toeach other. Each of the second portions 317 extends longitudinally in asecond direction D2 b. Each of the second portions 317 extends from theadjacent first portion 316 in the second direction D2 b, in which thesecond direction D2 b is non co-linear with the first direction D1 b.The second portions 317 are substantially parallel to each other.

Each of the third portions 318 extends longitudinally in a thirddirection D3 b. The third portions 318 are substantially parallel toeach other. Each of the third portions 318 extends from the adjacentsecond portion 317 in the third direction D3 b, in which the thirddirection D3 b is non co-linear with the second direction D2 b. Thethird portions 318 are substantially parallel to each other. Moreover,each of the first portions 316 extends from the adjacent third portion318 in the first direction D1 b, in which the first direction D1 b isnon co-linear with the third direction D3 b.

In some embodiments, the lengths of the first portions 316 are not thesame. For example, the lengths of the first portions 316 are graduallyincreased from the center C of the capacitor 300. For example, the firstportion 316 adjacent the center C has the first end 312 and has theshortest length among the first portions 316. The third portion 318farthest away from the center C has the second end 314 and has thelongest length among the third portions 318. Similarly, the lengths ofthe second portions 317 are not the same, and the lengths of the secondportions 317 are gradually increased from the center C of the capacitor300. For example, the second portion 317 closer to the center C has ashorter length than the second portion 317 away from the center C.

The second electrode 320 of the capacitor 300 includes a plurality ofturns. The second electrode 320 extends outwards from a first end 322 toa second end 324, in which the first end 322 of the second electrode 320is disposed adjacent the center C of the capacitor 300. The secondelectrode 320 is a continuous line and does not have any branch betweenthe first end 322 and the second end 324. The second electrode 320includes a plurality of first portions 326, a plurality of secondportions 327, and a plurality of third portions 328. The first portions326, the second portions 327, and the third portions 328 are coplanarlyarranged. The first portions 326, the second portions 327, and the thirdportions 328 are sequentially arranged and connected to each other fromthe first end 322 to the second end 324 of the second electrode 320.

Each of the first portions 326 extends longitudinally in a fourthdirection D4 b. The first portions 326 are substantially parallel toeach other. Each of the second portions 327 extends longitudinally in afifth direction D5 b. Each of the second portions 327 extends from theadjacent first portion 326 in the fifth direction D5 b, in which thefifth direction D5 b is non co-linear with the fourth direction D4 b.The second portions 327 are substantially parallel to each other.

Each of the third portions 328 extends longitudinally in a sixthdirection D6 b. The third portions 328 are substantially parallel toeach other. Each of the third portions 328 extends from the adjacentsecond portion 327 in the sixth direction D6 b, in which the sixthdirection D6 b is non co-linear with the fifth direction D5 b. The thirdportions 328 are substantially parallel to each other. Moreover, each ofthe first portions 326 extends from the adjacent third portion 328 inthe fourth direction D4 b, in which the fourth direction D4 b is nonco-linear with the sixth direction D6 b.

In some embodiments, the lengths of the first portions 326 are not thesame. For example, the lengths of the first portions 326 are graduallyincreased from the center C of the capacitor 300. For example, the firstportion 326 adjacent the center C has the first end 322 and has theshortest length among the first portions 326. The third portion 328farthest away from the center C has the second end 314 and has thelongest length among the third portions 328. Similarly, the lengths ofthe second portions 327 are not the same, and the lengths of the secondportions 327 are gradually increased from the center C of the capacitor300. For example, the second portion 327 closer to the center C has ashorter length than the second portion 327 away from the center C.

In some embodiments, the first direction D1 b is substantially parallelto the fourth direction D4 b, the second direction D2 b is substantiallyparallel to the fifth direction D5 b, and the third direction D3 b issubstantially parallel to the sixth direction D6 b. In some embodiments,an angle θ1 b between the first direction D1 b and the second directionD2 b is greater than or approximately equal to 120 degrees, and an anglebetween the first portions 316, 326 and the second portions 317, 327 isgreater than or approximately equal to 120 degrees. In some embodiments,an angle θ2 b between the second direction D2 b and the third directionD3 b is greater than or approximately equal to 120 degrees, and an anglebetween the second portions 317, 327 and the third portions 318, 328 isgreater than or approximately equal to 120 degrees. In some embodiments,an angle θ3 b between the first direction D1 b and the third directionD3 b is greater than or approximately equal to 120 degrees, and an anglebetween the first portions 316, 326 and the third portions 318, 328 isgreater than or approximately equal to 120 degrees.

For better space utilization, the first end 312 of the first electrode310 and the second end 314 of the first electrode 310 do not face thesame direction, and the first end 322 of the second electrode 320 andthe second end 324 of the second electrode 320 do not face the samedirection. Moreover, the first end 312 of the first electrode 310 andthe first end 322 of the second electrode 320 do not face the samedirection, and the second end 314 of the first electrode 310 and thesecond end 324 of the second electrode 320 do not face the samedirection. In some embodiments, the first end 312 of the first electrode310 and the first end 322 of the second electrode 320 face oppositedirections. In some embodiments, the second end 314 of the firstelectrode 310 and the second end 324 of the second electrode 320 faceopposite directions.

The first electrode 310 and the second electrode 320 can be connected topower lines or other metal layers through vias 330. In some embodiments,the vias 330 are disposed adjacent the second ends 314, 324 of the firstand second electrodes 310, 320.

Reference is made to FIG. 4, which is a plan view of a semiconductordevice according to some embodiments of the disclosure. In someembodiments, the capacitor 400 of the semiconductor device is anoctagonal double surround structure. The capacitor 400 includes a firstelectrode 410 and a second electrode 420. The first electrode 410 andthe second electrode 420 are disposed in a plane, such as in the samemetal layer. The first electrode 410 and the second electrode 420 arenot directly connected to each other, and the first electrode 410 andthe second electrode 420 surround each other and extend from a center Cof the capacitor 400 to an outer portion of the capacitor 400.

The first electrode 410 of the capacitor 400 includes a plurality ofturns. The first electrode 410 extends outwards from a first end 412 toa second end 414, in which the first end 412 of the first electrode 410is disposed adjacent the center C of the capacitor 400. The firstelectrode 410 is a continuous line and does not have any branch betweenthe first end 412 and the second end 414. The first electrode 410includes a plurality of first portions 416, a plurality of secondportions 417, a plurality of third portions 418, and a plurality offourth portions 419. The first portions 416, the second portions 417,the third portions 418, and the fourth portions 419 are coplanararranged. The first portions 416, the second portions 417, the thirdportions 418, and the fourth portions 419 are sequentially arranged andare connected to each other from the first end 412 to the second end 414of the first electrode 410.

Each of the first portions 416 extends longitudinally in a firstdirection D1 c. The first portions 416 are substantially parallel toeach other. Each of the second portions 417 extends longitudinally in asecond direction D2 c. Each of the second portions 417 extends from theadjacent first portion 416 in the second direction D2 c, in which thesecond direction D2 c is non co-linear with the first direction D1 c.The second portions 417 are substantially parallel to each other.

Each of the third portions 418 extends longitudinally in a thirddirection D3 c. The third portions 418 are substantially parallel toeach other. Each of the third portions 418 extends from the adjacentsecond portion 417 in the third direction D3 c, in which the thirddirection D3 c is non co-linear with the second direction D2 c. Thethird portions 418 are substantially parallel to each other.

Each of the fourth portions 419 extends longitudinally in a fourthdirection D4 c. The fourth portions 419 are substantially parallel toeach other. Each of the fourth portions 419 extends from the adjacentthird portion 418 in the fourth direction D4 c, in which the fourthdirection D4 c is non co-linear with the third direction D3 c. Thefourth portions 419 are substantially parallel to each other. Moreover,each of the first portions 416 extends from the adjacent fourth portion419 in the first direction D1 c, in which the first direction D1 c isnon co-linear with the fourth direction D4 c.

In some embodiments, the lengths of the first portions 416, the secondportions 417, the third portions 418, and the fourth portions 419 arenot the same and are gradually increased from the center C of thecapacitor 400. For example, the first portion 416 adjacent the center Chas the first end 412 and has the shortest length among the firstportions 316. The first portion 416 farthest away from the center C hasthe second end 414 and has the longest length among the first portions416.

The second electrode 420 of the capacitor 400 includes a plurality ofturns. The second electrode 420 extends outwards from a first end 422 toa second end 424, in which the first end 422 of the second electrode 420is disposed adjacent the center C of the capacitor 400. The secondelectrode 420 is a continuous line and does not have any branch betweenthe first end 422 and the second end 424. The second electrode 420includes a plurality of first portions 426, a plurality of secondportions 427, a plurality of third portions 428, and a plurality offourth portions 429. The first portions 426, the second portions 427,the third portions 428, and the fourth portions 429 are coplanararranged. The first portions 426, the second portions 427, the thirdportions 428, and the fourth portions 429 are sequentially arranged andconnected to each other from the first end 422 to the second end 424 ofthe second electrode 420.

Each of the first portions 426 extends longitudinally in a fifthdirection D5 c. The first portions 426 are substantially parallel toeach other. Each of the second portions 427 extends longitudinally in asixth direction D6 c. Each of the second portions 427 extends from theadjacent first portion 426 in the sixth direction D6 c, in which thesixth direction D6 c is non co-linear with the fifth direction D5 c. Thesecond portions 427 are substantially parallel to each other.

Each of the third portions 428 extends longitudinally in a seventhdirection D7 c. The third portions 428 are substantially parallel toeach other. Each of the third portions 428 extends from the adjacentsecond portion 427 in the seventh direction D7 c, in which the seventhdirection D7 c is non co-linear with the sixth direction D6 c. The thirdportions 428 are substantially parallel to each other.

Each of the fourth portions 429 extends longitudinally in an eighthdirection D8 c. The fourth portions 429 are substantially parallel toeach other. Each of the fourth portions 429 extends from the adjacentthird portion 428 in the eighth direction D8 c, in which the eighthdirection D8 c is non co-linear with the seventh direction D7 c. Thefourth portions 429 are substantially parallel to each other. Moreover,each of the first portions 426 extends from the adjacent fourth portion429 in the fifth direction D5 c, in which the fifth direction D5 c isnon co-linear with the eighth direction D8 c.

In some embodiments, the first direction D1 c is substantially parallelto the fifth direction D5 c, the second direction D2 c is substantiallyparallel to the sixth direction D6 c, the third direction D3 c issubstantially parallel to the seventh direction D7 c, and the fourthdirection D4 c is substantially parallel to the eighth direction D8 c.In some embodiments, an angle θ1 c between the first direction D1 c andthe second direction D2 c is greater than or approximately equal to 45degrees, and an angle between the first portions 416, 426 and the secondportions 417, 427 is greater than or approximately equal to 135 degrees.In some embodiments, an angle θ2 c between the second direction D2 c andthe third direction D3 c is greater than or approximately equal to 45degrees, and an angle between the second portions 417, 427 and the thirdportions 418, 428 is greater than or approximately equal to 135 degrees.In some embodiments, an angle θ3 c between the first direction D1 c andthe fourth direction D4 c is greater than or approximately equal to 45degrees, and an angle between the first portions 416, 426 and the fourthportions 419, 429 is greater than or approximately equal to 135 degrees.

In some embodiments, the lengths of the first portions 426, the secondportions 427, the third portions 428, and the fourth portions 429 arenot the same and are gradually increased from the center C of thecapacitor 400. For example, the first portion 426 adjacent the center Chas the first end 422 and has the shortest length among the firstportions 426. The first portion 426 farthest away from the center C hasthe second end 424 and has the longest length among the first portions426.

For better space utilization, the first end 412 of the first electrode410 and the second end 414 of the first electrode 410 face the samedirection, and the first end 422 of the second electrode 420 and thesecond end 424 of the second electrode 420 face the same direction.Moreover, the first end 412 of the first electrode 410 and the first end422 of the second electrode 420 do not face the same direction, and thesecond end 414 of the first electrode 410 and the second end 424 of thesecond electrode 420 do not face the same direction. In someembodiments, the first end 412 of the first electrode 410 and the firstend 422 of the second electrode 420 face opposite directions. In someembodiments, the second end 414 of the first electrode 410 and thesecond end 424 of the second electrode 420 face opposite directions.

The first electrode 410 and the second electrode 420 can be connected topower lines or other metal layers through vias 430. In some embodiments,the vias 430 are disposed adjacent the second ends 414, 424 of the firstand second electrodes 410, 420.

Reference is made to FIG. 5, which is a cross-sectional view of asemiconductor device according to some embodiments of the disclosure.The semiconductor device 500 includes a plurality of metal layers. Forexample, the semiconductor device 500 includes a first metal layer M1, asecond metal layer M2, a third metal layer M3, and a fourth metal layerM4. The second metal layer M2 and the third metal layer M3 are formedbetween the first metal layer M1 and the fourth metal layer M4 and havea first capacitor 510 and a second capacitor 520, respectively. Thefirst metal layer M1 and the fourth metal layer M4 can be interconnectedthrough vias 530.

In some embodiments, the first metal layer M1 includes a bottom metalplate 540, and the fourth metal layer M4 includes a top metal plate 542.The bottom metal plate 540 and the top metal plate 542 may serve asshield metal plates, and the first capacitor 510 and the secondcapacitor 520 are disposed between the bottom metal plate 540 and thetop metal plate 542.

The first capacitor 510 and the second capacitor 520 can be a MOMcapacitor, such as the capacitor 100, 200, 300, 400 discussed above. Thefirst capacitor 510 is disposed in the second metal layer M2 andincludes a first electrode 512 and a second electrode 514. The secondcapacitor 520 is disposed in the third metal layer M3 and includes afirst electrode 522 and a second electrode 524.

In some embodiments, the first electrode 512 of the first capacitor 510completely overlaps the first electrode 522 of the second capacitor 520,and the second electrode 514 of the first capacitor 510 completelyoverlaps the second electrode 524 of the second capacitor 520. In someembodiments, the first electrode 512 of the first capacitor 510 and thefirst electrode 522 of the second capacitor 520 are oppositely charged,and the second electrode 514 of the first capacitor 510 and the secondelectrode 524 of the second capacitor 520 are oppositely charged.

For example, the first electrode 512 is a cathode of the first capacitor510, the second electrode 514 is an anode of the first capacitor 510,the first electrode 522 is an anode of the second capacitor 520, and thesecond electrode 524 is a cathode of the second capacitor 520. By suchan arrangement, the capacitance is not only laterally introduced betweenthe first electrode 512 and the second electrode 514 of the firstcapacitor 510 and between the first electrode 522 and the secondelectrode 524 of the second capacitor 520, but also verticallyintroduced between the first electrode 512 of the first capacitor 510and the first electrode 522 of the second capacitor 520 and the secondelectrode 514 of the first capacitor 510 and the second electrode 524 ofthe second capacitor 520, such that the capacitance value of thesemiconductor device 500 can be further increased.

Reference is made to FIG. 6, which is a plan view of a semiconductordevice according to some embodiments of the disclosure. Thesemiconductor device 600 includes a first capacitor C1 and a secondcapacitor C2, in which the first capacitor C1 and the second capacitorC2 are disposed in a plane, such as the same metal layer. In someembodiments, the first capacitor C1 and the second capacitor C2 arequadrilateral double surround structures. In some other embodiments, thefirst capacitor C1 and the second capacitor C2 can be spiral doublesurround structures, hexagonal double surround structures, octagonaldouble surround structures, or other polygonal double surroundstructures.

The semiconductor device 600 includes a first electrode 610 of the firstcapacitor C1, a second electrode 620 of the second capacitor C2, and acommon electrode 630 shared by the first capacitor C1 and the secondcapacitor C2. The common electrode 630 is disposed between the firstelectrode 610 of the first capacitor C1 and the second electrode 620 ofthe second capacitor C2. The common electrode 630 and the firstelectrode 610 form the first capacitor C1, and the common electrode 630and the second electrode 620 form the second capacitor C2. In someembodiments, the first electrode 610 is an anode of the first capacitorC1, the second electrode 620 is an anode of the second capacitor C2, andthe common electrode 630 is a common cathode of the first capacitor C1and the second capacitor C2. In some other embodiments, the firstelectrode 610 is a cathode of the first capacitor C1, the secondelectrode 620 is a cathode of the second capacitor C2, and the commonelectrode 630 is a common anode of the first capacitor C1 and the secondcapacitor C2.

In some embodiments, the structure of FIG. 6 can be stacked on anidentical or similar structure, as illustrated in FIG. 7, such that thecapacitance can be laterally introduced between the first capacitor C1and the second capacitor C2 in the plane and vertically introducedbetween the first capacitor C1 and the second capacitor C2 in differentplanes.

Reference is made to FIGS. 8A to 8F, which are cross-sectional views ofthe various stages of fabricating a semiconductor device according tosome embodiments of the disclosure. As shown in FIG. 8A, a dielectriclayer 810 is formed on a substrate 800. The substrate 800 can include anelementary semiconductor (e.g., silicon or germanium) and/or a compoundsemiconductor (e.g., silicon germanium, silicon carbide, galliumarsenic, indium arsenide, gallium nitride, or indium phosphide). Thesubstrate 800 may include one or more doped regions. For example, aregion of the substrate 800 may be doped with a p-type dopant. Suitablep-type dopants include boron, gallium, indium, other suitable p-typedopants, and/or combinations thereof. The substrate may also include oneor more regions doped with an n-type dopant such as phosphorus, arsenic,other suitable n-type dopants, and/or combinations thereof. Doping maybe implemented using a process such as ion implantation or diffusion invarious steps and techniques. In some embodiments, the substrate 800includes one or more active devices (not shown) formed on the substrate.Examples of such active devices include

P-channel field effect transistors (PFETs), N-channel FETs (NFETs),metal-oxide semiconductor field effect transistors (MOSFETs),complementary metal-oxide semiconductor (CMOS) transistors, FinFETs,high voltage transistors, high frequency transistors, bipolar junctiontransistors, other suitable devices, and/or combinations thereof.

The dielectric layer 810 may include a semiconductor oxide, asemiconductor nitride, a semiconductor oxynitride, TEOS oxide, or othersuitable materials. In some embodiments, the dielectric layer 810includes one or more sub-layers such as an etch stop layer and/or acontact etch stop layer (CESL).

Referring to FIG. 8B, a patterning process is performed to pattern thedielectric layer 810, thereby forming a plurality of trenches 820 in thedielectric layer 810. In some embodiments, the number of the trenches820 can be two or three. The top view of the trenches 820 can be spiral,quadrilateral, hexagonal, octagonal, or other polygonal in shape.

Referring to FIG. 8C, a filling layer 830 is deposited in the trenches820 and on the dielectric layer 810. The filling layer 830 includes aconductive material, such as tungsten, copper, aluminum,aluminum/silicon/copper alloy, titanium, titanium nitride, tungstennitride, metal silicide, combinations thereof, or another suitableconductive material.

Referring to FIG. 8D, a planarization process is performed to expose thetop surface of the dielectric layer 810, and the conductive materialthat remains is filled in the trenches 820 (as shown in FIG. 8C), andfunctions as electrodes 840 of the capacitor. In some embodiments, theelectrodes 840 of the capacitor include a cathode and an anode, and thestructure and dimensions thereof are similar to those discussed in FIGS.1-4. In some other embodiments, the electrodes 840 of the capacitorinclude a cathode, an anode, and a common electrode, and the structureand dimensions thereof are similar to those discussed in FIGS. 1-4 and6. In some embodiments, a combination of the electrodes 840 and thedielectric layer 810 can be referred to as a metal layer, and theelectrodes 840 are the conductive lines in the metal layer.

Referring to FIG. 8E, an additional metal layer including electrodes 850and the dielectric layer 814 is formed over the metal layer includingthe electrodes 840 and the dielectric layer 810, and the metal layersare spaced by the dielectric layer 812 therebetween. The electrodes 850are formed in the dielectric layer 814 and have similar patterns as thatof the electrodes 840.

Referring to FIG. 8F, an interlayer dielectric layer 816 is formed onthe electrodes 850 and the dielectric layer 814, and a plurality of vias860 are formed penetrating the interlayer dielectric layer 816 toconnect to the corresponding electrodes 850. In some embodiments, theelectrodes 840 in the dielectric layer 810 includes a first anode 840 aand a first cathode 840 b, in which the first anode 840 a spirally orpolygonally extends outwards from a first end to a second end of thefirst anode 840 a, and the first anode 840 a and the first cathode 840 bhave a substantially equal spacing therebetween. The electrodes 850 inthe dielectric layer 814 includes a second anode 850 b and a secondcathode 850 a, in which the second anode 850 b spirally or polygonallyextends outwards from a first end to a second end of the second anode850 b, and the second anode 850 b and the second cathode 850 a have asubstantially equal spacing therebetween. The second anode 850 boverlaps the first cathode 840 b to generate extra capacitancetherebetween. The second cathode 850 a overlaps the first anode 840 a togenerate extra capacitance therebetween.

According to some embodiments, the electrodes of the capacitor surroundeach other and are spaced apart by a consistent distance. The electrodesof the capacitors spirally or polygonally extend from a first end to asecond end without any branch, such that the capacitance value of thecapacitor can be increased.

According to some embodiments, a semiconductor device includes acapacitor. The capacitor includes a first electrode and a secondelectrode disposed in a first metal layer. The first electrode has afirst end and a second end, and the first electrode has a spiral patternextending outwards from the first end to the second end. The firstelectrode and the second electrode have a substantially equal spacingtherebetween.

According to some embodiments, a semiconductor device includes a firstelectrode and a second electrode disposed in a metal layer. The firstelectrode has a first end and a second end. The first electrode has aplurality turns and extends outwards from the first end to the secondend. The first electrode includes a first portion extendinglongitudinally in a first direction, in a plane, and a second portioncoplanar with the first portion in the plane and extending from thefirst portion in a second direction that is non co-linear with the firstdirection. The first electrode and the second electrode have asubstantially equal spacing therebetween.

According to some embodiments, a method includes forming a firstdielectric layer on a substrate, and a first anode and a first cathodeare formed in the first dielectric layer, in which the first anodespirally or polygonally extends outwards from a first end to a secondend of the first anode, and the first anode and the first cathode have asubstantially equal spacing therebetween. A second dielectric layer isformed on the first dielectric layer. A second anode and a secondcathode are formed in the second dielectric layer, in which the secondanode spirally or polygonally extends outwards from a first end to asecond end of the second anode, and the second anode and the secondcathode have a substantially equal spacing therebetween.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a firstcapacitor, comprising: a first electrode disposed in a first metal layerand having a first end and a second end, wherein the first electrode hasa spiral pattern extending outwards from the first end to the secondend; and a second electrode disposed in the first metal layer, whereinthe first electrode and the second electrode have a substantially equalspacing therebetween.
 2. The semiconductor device of claim 1, whereinthe second electrode has a first end and a second end, wherein thesecond electrode is spirally extended outwards from the first end of thesecond electrode to the second end of the second electrode.
 3. Thesemiconductor device of claim 2, wherein the first end of the firstelectrode and the first end of the second electrode face oppositedirections.
 4. The semiconductor device of claim 2, wherein the secondend of the first electrode and the second end of the second electrodeface opposite directions.
 5. The semiconductor device of claim 1,wherein the spiral pattern of the first electrode is a spiral ofArchimedes.
 6. The semiconductor device of claim 1, further comprising:a second capacitor, comprising: a third electrode disposed in a secondmetal layer, wherein the third electrode overlaps the first electrode;and a fourth electrode disposed in the second metal layer, wherein thefourth electrode overlaps the second electrode.
 7. The semiconductordevice of claim 6, wherein the first electrode and the fourth electrodeare anodes, and the second electrode and the third electrode arecathodes.
 8. The semiconductor device of claim 6, further comprising apair of shield plates, wherein the first capacitor and the secondcapacitor are disposed between the shield plates.
 9. The semiconductordevice of claim 1, further comprising a common electrode disposed in thefirst metal layer and interposed between the first electrode and thesecond electrode.
 10. The semiconductor device of claim 9, wherein thecommon electrode is an anode, and the first electrode and the secondelectrode are cathodes.
 11. The semiconductor device of claim 9, whereinthe common electrode is a cathode, and the first electrode and thesecond electrode are anodes.
 12. The semiconductor device of claim 9,wherein a first distance between the common electrode and the firstelectrode is equal to a second distance between the common electrode andthe second electrode.
 13. The semiconductor device of claim 1, whereinthe first capacitor is a metal-oxide-metal capacitor.
 14. Asemiconductor device, comprising: a first electrode disposed in a firstmetal layer and having a first end and a second end, the first electrodehaving a plurality turns and extending outwards from the first end tothe second end, the first electrode comprising: a first portionextending longitudinally in a first direction in a plane; and a secondportion coplanar with the first portion in the plane and extending fromthe first portion in a second direction that is non co-linear with thefirst direction; and a second electrode disposed in the first metallayer, wherein the first electrode and the second electrode have asubstantially equal spacing therebetween.
 15. The semiconductor deviceof claim 14, wherein the first electrode is free of a branch.
 16. Thesemiconductor device of claim 14, wherein the second electrode is freeof a branch.
 17. The semiconductor device of claim 14, furthercomprising a third electrode disposed in the first metal layer andinterposed between the first electrode and the second electrode.
 18. Thesemiconductor device of claim 17, wherein the third electrode is free ofa branch.
 19. The semiconductor device of claim 14, wherein thesemiconductor device is in a quadrilateral capacitor, a hexagonalcapacitor, or an octagonal capacitor.
 20. A method, comprising: forminga first dielectric layer on a substrate; forming a first anode and afirst cathode in the first dielectric layer, wherein the first anodespirally or polygonally extends outwards from a first end to a secondend of the first anode, and the first anode and the first cathode have asubstantially equal spacing therebetween; forming a second dielectriclayer on the first dielectric layer; and forming a second anode and asecond cathode in the second dielectric layer, wherein the second anodespirally or polygonally extends outwards from a first end to a secondend of the second anode, and the second anode and the second cathodehave a substantially equal spacing therebetween.